Abstract
We report a novel analytic model for the ON -current and effective drive current in nanowire MOSFETs considering the random dopant fluctuation effects. This model is derived from the basic drain current equation considering RDF in the channel region of the device. The model makes use of appropriate voltage relations to be applied in the oxide-interface boundary conditions, and is found to be in excellent agreement with TCAD simulations of the device considering RDF effects.
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