Abstract
ABSTRACTIn this work the characteristics of hydrogen clusters in hot filament assisted CVD and conventional glow discharge a-Si:H films are discussed. Computer simulations of the observed free-induction decays of the 1H NMR signals indicate that the distribution of the nearest-neighbor distances between H atoms in the H clusters is quite narrow in hot filament assisted CVD a-Si:H whereas the distribution is larger in glow discharge a-Si:H. This is clear evidence of improved structural order in hot filament assisted CVD a-Si:H. The relaxed hydrogenated divacancy and multi-vacancy models reproduce the main features of the observed free-induction decay in hotwire a-Si:H very well. Computer simulations of the multiple-quantum NMR spectra indicate that a relaxed hydrogenated divacancy configuration leads to good agreement with experimental observations in device quality glow discharge a-Si:H. Results of simulations based on other H cluster configurations are also discussed. These results provide restrictions on the possible models for H clusters in a-Si:H.
Published Version
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