Abstract
We extend the iterative matrix method for the solution of the Boltzmann transport equation in multi-band semiconductors to the calculation of second order parameters such as correlation functions and the noise temperature. The method allows also the extraction of the diffusion coefficient in each valley. The results for the case of GaAs with two valleys show that the diffusion in this material is dominated mainly by interactions in the Γ valley. The calculated noise temperature is in good agreement with Monte Carlo results.
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