An investigation of tunable spin–orbit interactions in front-gated In 0.75Ga 0.25As/In 0.75Al 0.25As heterojunctions

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We investigated zero-field spin-splitting in normal-type In 0.75Ga 0.25As/In 0.75Al 0.25As heterostructure by magnetoresistance measurements at 1.5 K . The maximum value of spin–orbit interaction parameter, α zero, obtained here is 32×10 −12 eVm . We also confirmed a tuning of α zero by applying gate biases. On the other hand, we observed no beat oscillation when the In 0.75Ga 0.25As well width decreased from 30 to 10 nm . These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.