Abstract
N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6Mrad at cryogenic (77K) and room temperatures (300K). The MOS devices irradiated at 77K and 300K were characterized at 77K and 300K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77K irradiation results were then compared with 300K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300K.
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