Abstract
Abstract Dielectric materials with high permittivity and low dielectric loss have a range of promising applications within electronic devices. Here, we report on Zr co-doped (Ga 0.5 Nb 0.5 ) 0.03 Ti 0.97 O 2 ceramics, fabricated using a solid-state reaction. The colossal permittivity (CP) of (Ga 0.5 Nb 0.5 ) 0.03 -(Zr x Ti 1-x ) 0.97 O 2 ceramics was investigated (x = 0%, 1%, 4%, 6%, 10%, 20%). When the doping value of Zr was 4%, the dielectric loss was reduced to 0.098 and, at room temperature and at a frequency of 1000 Hz, the dielectric permittivity was recorded as 2420. In addition, the material's dielectric permittivity exhibited good stability at temperatures ranging from −50 °C to 200 °C. Using X-ray photoelectron spectroscopy (XPS) and Scanning electron microscopy (SEM), we have observed that Zr doping reduces grain size and increases grain boundary regions. According to our XPS and impedance analysis, Zr doping also reduces the concentration of oxygen vacancies, which are considered to be the main cause of dielectric loss. We believe that the Zr doping is an effective method for reducing the dielectric loss of CP materials.
Published Version
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