Abstract
This paper presents a dynamic investigation of the body diode behavior of MOSFETs rated for 3.3kV applications. The body diodes of MOSFETs with different cell designs and pitch sizes have been used. The turn-off behavior of the body diode is compared to that of a 3.3kV JBS diode.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
