Abstract
As the device feature size shrinks, the dissipation of power increases and further raises the carrier and lattice temperature, which finally affects device performance. In this paper, we analyze the comprehensive influence of the self-heating effect and hot carrier injection (HCI) using TCAD simulations. Based on the hydrodynamic and thermodynamic models, it is demonstrated that the thermal surface resistance had a positive impact on the carrier and lattice temperature and that the drain saturation current is reduced dramatically due to the self-heating effect. Moreover, the impact of HCI on device performance is discussed. Finally, it is concluded that the self-heating effect exacerbates the influence of HCI on device characteristics.
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