An investigation into proton conduction of ga doped boehmite based memristor with simulated synaptic behavior

Abstract

Artificial synapses based on protonic memristor have great potential in constructing neural morphological computing system. However, further investigation is still required to understand the proton conduction mechanism of protonic memristors. Here, we present a new type of Ga doped boehmite based memristors with artificial synapse functionality, which can achieve variations in conductance levels by precise control of the Ga doping content. Compared with undoped boehmite, there is no obvious change in crystal structure, particle morphology and chemical bond doped with different of concentration Ga. The change in the electrical conductance is found to be a result of proton transfer, closely resembling what takes place in biological neurons. Furthermore, the first-principle density functional theory (DFT) calculation is conducted to elucidate the proton conduction mechanism and zig-zag-like pathways for proton transfer in the memristor was proposed. The results establish a precedent for tuning the proton transfer behaviour in memristor-based neural devices, thereby enhancing their practicality. It provides a novel approach for studying the resistance switching behavior in proton transfer-based memristors.