Abstract
A wide band CDMA LDMOS power transistor, with internal RF matching and bias networks, fabricated on LTCC (Low Temperature Cofired Ceramic) substrates, has been developed. The internally matched packaged device can be configured to deliver output power of 180 watts, while providing third order inter-modulation distortion products less than -40 dBc, 20% efficiency, and 12 dB of gain. The terminal impedances of the packaged LDMOS transistor, at the gate and drain leads respectively, are greater than 5 /spl Omega/. The LTCC elements each contain embedded passive L-C circuitry, forming the input and output matching networks. These networks are designed to transform to a high level of impedance, to the source and load impedance targets required by the devices in order to achieve optimal wide band CDMA performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
