Abstract
In this study, the hump in the capacitance–voltage (C–V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO 2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH 3 surface treatments improved the C–V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO 2 thin film was dominated by Frenkel–Poole emission in a high electric field.
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