An Integrated LVDS Transmitter in 0.18-<inline-formula><tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS Technology With High Immunity to EMI

Abstract

This paper presents an on-chip design topology that compensates the effects of electromagnetic interference (EMI) in a low-voltage differential signaling (LVDS) transmitter. The proposed structure enables the transmitter to maintain a wide differential opening by achieving a superior common-mode level independent driving current and common-mode feedback closed-loop gain. Direct power injection measurements illustrate that the proposed LVDS transmitter structure demonstrates a superior EMI immunity as it maintains an eye opening of at least 100 mVp-p in presence of a conductive EMI injection ranging from 150 to 2 GHz with an amplitude of up to 9 Vp-p. Additionally, transverse electromagnetic cell measurements validate the radiated immunity of the proposed integrated LVDS transmitter in presence of an EMI injection of 30 dBm (150 kHz–2 GHz). This EMI robust LVDS transmitter was designed using the UMC 0.18- $\mu$ m CMOS process.