Abstract
Non stoichiometric SnO2 nanoparticles form an important class of materials which is a wide gap ( 3.64 eV), transparent, n-type semiconductor. It has a wide range of applications in the field of optics, electronics and catalysis. In this review article some reports on structural, electrical and optical aspects of these materials (pure and doped) have been discussed in detail. Results from XRD, SEM, TEM, and electron diffraction patterns have shown the structural features of these SnO2 nanoparticles. Electrical properties have been discussed with respect to carrier concentration and carrier mobility that ultimately effects the conductance in these materials. Particle size also play an important role. Optical properties are determined by direct energy band gap between conduction and valence band. Results from UV-vis spectroscopy (absorption, reflectance and transmittance) show the actual band gap in these materials. Direct measurement of the bad gap (Eg) from the intercept of the energy axis in Tauc Plots, show its dependence on the type of dopant and its concentration and also on particle size.
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