Abstract
AbstractA 2.4/5.2/5.7‐GHz triple‐band low‐noise amplifier (LNA) achieved by switching between different base bias currents (IB) using InGaP‐GaAs HBT technology is reported for the first time. Transducer gains (S21) of 14.6 and 11/9.5 dB, input return losses (S11) of −18.7 and −21.0/−11.5 dB, output return losses (S22) of −20 and −22.7/−24.9 dB, reverse isolation (S12) of −50.5 and −44.4/−44.4 dB, and noise figures of 3.35 and 2.54/2.71 dB were achieved at 2.4 and 5.2/5.7 GHz, respectively. The input 1‐dB compression point (P1dB) and input 3rd‐order intercept point (IIP3) of −8.5 and −1 dBm, respectively, were also achieved at 5.2 GHz. The power consumptions are only 7.6 and 3.6 mW for the 2.4‐ and 5.2/5.7‐GHz bands, respectively. The LNA only occupies an area of 300 × 500 μm, excluding the test pads because only one inductor is used. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 539–542, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20528
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