Abstract
A GaAs MESFET model is presented that addresses the modeling problem arising from the discrepancy between the derivatives of the dc current and the measured small signal parameters of a GaAs MESFET. This discrepancy traditionally required the user of a non-linear circuit analysis program such as SPICE to trade off the accuracy between the dc analysis and ac analysis. This paper addresses this problem and leads to a solution that completely eliminates the need for such a trade off. Two additional nodes are incorporated into the SPICE MESFET model by providing two extra conducting paths necessary to reconcile the aforementioned discrepancies and to keep the equations self-consistent. In addition, the model allows the user to select different sets of model parameters to independently match I/sub ds/, g/sub m/, and g/sub ds/, An integration scheme to transform the new model back to a 3/spl times/3 Y-matrix is employed to accelerate the simulation speed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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