Abstract
A theory for stationary domains in GaAs MESFET's is presented. To the lowest order of approximation the theoretical predictions of maximum domain field and domain voltage agree with those for stable, propagating domains in highly doped Gunn diodes. On the basis of model expressions for the field and impurity dependence of the drift velocity and of the diffusion coefficient, analytical expressions are derived for maximum field, voltage, capacitance, and shape of large and small domains. Specific calculations are performed for channel dopings of interest in GaAs MESFET's. The results are of direct interest in the modeling of GaAs MESFET's and integrated Circuits.
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