Abstract
We have studied the dependence of the growth of GaAs on Si substrate on the flow rate of the source for GaAs seed layer. GaAs buffer with different growth conditions of the inserted GaAs seed has been grown on Si (001) substrate by using metalorganic chemical vapor deposition (MOCVD). Structural properties of the GaAs buffer were investigated by using scanning electron microscopy (SEM) and high-resolution X-ray diffraction (HRXRD). The number of misfit dislocation in the GaAs seeds on Si substrates decreased as the growth rate and the V/III ratio of the GaAs seed were increased and decreased, respectively. Also, we have investigated the improvement in GaAs buffer due to electron beam (e-beam) treatment. The peak position for the GaAs buffer on Si reached the original peak of the GaAs substrate due to the e-beam treatment. Finally, the efficiency of an AlGaAs/GaAs double junction solar cell on a Si substrate was about 22.6%.
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