Abstract
An improved three-phase buck rectifier (3ph-BR) with low voltage stress on switching devices is proposed in this letter. In the conventional 3ph-BR, the voltage stress on MOSFET s is higher than the amplitude of input phase voltage. However, in the proposed 3ph-BR, the voltage stress on MOSFET s is lower than the amplitude of input phase voltage, which results in reduction of voltage stress on MOSFET s. Therefore, the cost-efficient and low voltage rating MOSFET s with low on-resistance can be utilized, which makes the proposed 3ph-BR suitable for applications that require high-efficiency and high-density. A 1.5-kW experimental prototype of the proposed rectifier is built to verify the analysis results.
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