Abstract
A refined technology of SiC p–n junctions is proposed. Usage of boron to compensate the high doping of n layers on structures with different continuous areas is primarily experimentally demonstrated. A comparison between the electrical characteristics of boron compensated and uncompensated diodes is presented. Then a technology using cellular structure for 6H-SiC large area p–n devices is designed and optimized. For these split area structures the micropipes effect is avoided. Based on a matrix structure with 0.16mm2 cell area a medium power (600V breakdown voltage and 1A at forward voltage of 5V) p–n diode has been fabricated and tested.
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