Abstract

This paper proposes a novel 4H-SiC diode---accumulation-mode MOS channel diode (AMMCD). Theoretical analyses of the operation principle of the AMMCD are carried out. The parameters of the AMMCD are optimized by Sentaurus TCAD tools. Finally, the 4H-SiC AMMCD with low forward voltage drop (VF) and reverse leakage current (IR) is obtained. Compared with 4H-SiC super barrier rectifier (SBR) and junction barrier Schottky diode (JBS) with the same breakdown voltage (650 V), the AMMCD proposed in this paper has superior static electrical characteristics. In addition, the current and electric field profiles of 4H-SiC SBR and AMMCD are analyzed as well.

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