Abstract
This paper aims to model the static behavior of two generations of Silicon carbide Metal Oxide Semiconductor Field Effect Transistors (SiC-MOSFETs) subjected to temperature and input voltage variations. The description of the studied device, its electro-thermal characterizations and the comparison of two generations of SiC-MOSFETs are presented. The SPICE model provided by the constructor is studied. The comparison between the simulation results of the SPICE model and measurements reveals limitations in terms of temperature behavior and electrical effects. In order to overcome these limitations, a compact model is used. This model accurately describes the static behavior of two generations of SiC-MOSFETs. The threshold voltage extracted from the compact model is exploited to analyze the physical behavior and to compare the performance of two generations of SiC-MOSFETs.
Published Version
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