Abstract
AbstractIn this letter, an improved small‐signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter‐wave applications is presented. The proposed small‐signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model‐calculated data can be achieved to demonstrate good modeling accuracy.
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