Abstract
We present a model for Tunnel FETs (TFETs) capable to describe off equilibrium transport as well as Band to Band Tunneling (BtBT), that is implemented as an additional block into an existing Multi-Subband Monte Carlo (MSMC) transport simulator. To account for the quantum effect associated to the confinement of carriers in Ultra Thin Body SOI devices, a correction to the computation of the BtBT generation rate is proposed. The developed simulator is here applied to the study of III-V based TFETs.
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