An improved model for computing the reflectivity of a AlAs/GaAs based distributed bragg reflector and vertical cavity surface emitting laser

Abstract

In this paper, reflectivity of a Distributed Bragg Reflector (DBR) has been computed by considering the effects of changes of wavelength on the changes of the refractive index of the materials of DBR layers. The intrinsic losses of the materials have been included in the computation of the reflectivity of the DBR. It has been found that the effect of change of the wavelength on the refractive index of the DBR materials reduces the Full Width Half Maxima (FWHM) of the stop band significantly which is expected to improve the laser characteristics. If the FWHM is reduced, the thickness of the active layer of a VCSEL can also be reduced which will further reduce the threshold current of the device. It has been found that the intrinsic losses of the materials have a significant effect on the reflectivity of a DBR. It has also been found that peak reflectivity of a 20 pair AlAs/GaAs DBR reduces by 0.2% after including the intrinsic losses (with a value of the intrinsic losses α = 10 cm−1).