Abstract
C‐V analysis of n‐type using metal‐semiconductor Schottky contacts is inadequate for determining free carrier concentration vs. depth profiles due to low barrier heights, uncontrolled oxide formation, and metal semiconductor chemical reactions. Concentration vs. depth profiles can be obtained over a wide range of carrier concentrations to virtually unlimited depth using electrochemical C‐V (ECV) analysis. However, the in aqueous solution reported in the literature is not ideal for the anodic dissolution of . This work reports an improved anodic etchant for ECV profiling of n‐type and the design of a constant current etch, difference method ECV profiler utilizing a new sample mounting technique.
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