Abstract
Short interval open tube Zn diffusion in GaAs at low temperatures is studied for application to heterostructure lasers. The electrochemical capacitance voltage (ECV) profiling technique is used to obtain the carrier concentration versus depth profiles for Zn diffused samples. Diffusion rate is found to be somewhat different from the values obtained for longer durations employing similar techniques. Results are applied to improve the ohmic contact quality for Al-free semiconductor lasers grown in our laboratory. No deterioration is observed in the light versus current (L-I) characteristics of these devices fabricated after Zn diffusion.
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