Abstract
A SPICE model for modeling GaAs MESFET devices more accurately is discussed. In particular, small-signal parameters are accurately modeled over a wide range of bias conditions. These results were achieved by modifying the model equations of H. Statz et al. (see IEEE Trans. Electron. Devices, vol.3, no.2, p.160-9, 1987) to better represent the variation of I/sub ds/ as a function of the applied voltage. The model applies over a large range of pinch-off voltages, allows size scaling of devices, and is suited for modeling R/sub ds/ changes with frequency. The Statz equations are used to represent diode characteristics and capacitive components of the model. >
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