An Ideal System for Analysis and Interpretation of Ion Beam Induced Luminescence

Abstract

Luminescence is produced during ion beam implantation or ion-solid interaction for most insulators, and contains rich information. Surprisingly, the information extracted is often far from optimum. Rather than summarizing literature work, the focus here is to design an optimized and feasible target chamber that could offer far more information than what has currently been obtained. Such an improved and multi-probe approach opens a range of options to simultaneously record luminescence spectra generated by the ion beam, explore transient and excited state signals via probes of secondary excitation methods (such as ionisation or photo-stimulation). In addition, one may monitor optical absorption, reflectivity and lifetime dependent features, plus stress and polarization factors. A particularly valuable addition to conventional measurements is to have the ability to modulate both the ion beam and the probes. These features allow separation of transient lifetimes, as well as sensing intermediate steps in the defect formation and/or relaxation, and growth of new phases and nanoparticle inclusions. While luminescence methods are the most sensitive probes of defect and imperfection sites in optically active materials, less work has been performed at controlled low and high temperatures. Measurement with controlled cooling or heating of the samples is effective to reveal phase transitions (both of host and inclusions). Furthermore, simultaneous excitations (e.g. ions and photons) at different temperatures may lead to different end-phase or stale structure under extreme ionization conditions and enable fabrication of unique material structures. References to the existing literature will underline that the overall benefits of studying ion beam induced luminescence can be far more fruitful than that has normally been considered.