An Extensive Simulation Study of Gaussian Drain Doped Heterojunction Double Gate TFET

Abstract

This paper presents a new Ge/SiGe heterojunction double-gate Tunnel Field Effect Transistor (DGTFET) that can significantly reduce band-to-band Tunneling (BTBT) leakage current while withholding its high mobility by introducing a low bandgap material, making it suitable for energy efficient analog and digital applications. The study shows an excellent reduction in ambipolar current with Gaussian doping profile at the drain side. The heterojunction DGTFET with Gaussian doping (HeTFET-GD) exhibits improvement in terms of drain current, ambipolar current and transconductance in comparison with conventional homojunction TFET. Much improved drain current, transconductance, and reduced ambipolar current allow the device to be used in very low power and high-speed applications. The proposed HeTFET-GD device simulation work was done by Sentaurus TCAD 2D device simulator from Synopsys.