Abstract
Author Dr. Jae-Sung Rieh received his Ph.D. degree in electrical engineering from the University of Michigan in 1999. His dissertation title was “Development of SiGe/Si HBTs and Their Applications to Microwave and Optoelectronics Monolithic Integrated Circuits.” He received his B.S. and M.S. degrees from Korea’s Seoul National University and worked in the IBM Microelectronics R&D Center, where he was involved in R&D activities in DiGe BiCMOS technologies. He also led the development of the 350-GHz SiGe HBT, the first Si-based transistor to operate in the submillimeter waveband. After he returned to Korea to teach at Korea University, he spent his sabbatical leaves with the Jet Propulsion Laboratory in Pasadena, California, and with the University of California, Los Angeles. Dr. Rieh has received many awards, including the IBM Faculty Award, IEEE Electron Device Society’s George E. Smith Award, and many more. He is a Fellow of IEEE.
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