Abstract
The leakage current decay and progressive breakdown in Al/HfYOx/GaAs and Al/Y2O3/GaAs structures during constant voltage stress are investigated. It is shown that the Curie-von Schweidler law in combination with series and parallel resistances can describe the observed current decrease in these structures accurately. The circuit model incorporates an additional parallel leakage current path associated with the local degradation of the oxide layer as well. Even though the evolution of the current is remarkably different in HfYOx than in Y2O3 because of the applied stress voltage range and current magnitudes, the proposed model is able to capture the main features exhibited by the current–time characteristic in both cases. Experimental data from other authors are analyzed within the same framework.
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