Abstract
A method has been formulated to explain field-enhanced non-equilibrium transients of pulsed MOS capacitors. In the author's theory the Coulombic emission of trap centres is assumed to be field dependent. The one-dimensional Poole-Frenkel model is used to describe the Coulombic emission probability of trap centres, which is dependent on the applied electric field. On the other hand, unlike previous theories, the contribution of carrier generation from non-Coulombic emission of trap centres is also considered. A different equation is founded to describe the change of the width of the space charge region with time, and then the MOS capacitance and gate current are related to the width of the space charge region. In such a manner the non-equilibrium capacitance-time and current-time transients are given. The comparison between theory and experiment has been made and shows that the author's theory can well explain the experimental results.
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