Abstract
The on-state performance of non-self aligned and self aligned trench IGBT designs is experimentally evaluated and compared for the first time in this paper. In contrast to previous reports based only on numerical simulations, experimental results presented in this paper demonstrate that the non-self aligned trench IGBT designs are superior to the self-aligned trench IGBT designs. Furthermore, the variation in the on-state voltage drop with the unit cell parameters of the non-self trench IGBT obtained through numerical simulations show trends that are opposite to those observed experimentally. Our analysis indicates that the disagreement between the experimental and numerical simulation results arises due to the assumption of an ideal ohmic contact to the N + emitter of the TIGBT designs made in previous numerical simulations.
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