Abstract
A ferroelectric memory array is described that may be implemented with discrete bits, discrete words, or multiple word components. Binary information is stored as either a positive or negative polarization state in the ferroelectric ceramic material and is read out, with interrogation, by sensing a positive polarity pulse for a " 1" bit, and the lack of a signal for a " 0." The maximum size of the memory is limited only by noise isolation of the bit lines. The array, because of its nonresonant operation, may be interrogated asynchronously. The memory READ/WRITE circuit configuration provides random word access, a device immune to disturb pulses, and compatibility with integrated or discrete circuits. The ceramic material and its configuration provide nonvolatile storage and non-destructive readout. Experimental 5-wordX8-bit discrete word prototype memory array implementations are examined.
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