Abstract
Synchroton X-ray topography is used to study defects in (100) InP crystals doped with Sn, S and Zn to carrier concentrations ranging from 10 17 to 2 × 10 19 cm -3. Edge, screw and mixed dislocations having a Burgers vector 1 2 a [110] have been found. The lowest dislocation densities (<100 cm -2) have been observed in heavily doped samples, which however always showed growth striations.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
