An equivalent circuit model of HCI effect for short-channel N-MOSFET

Abstract

The hot carrier injection (HCI) effect is an essential factor for the reliability of N-MOSFET. Under long-term usage time, the HCI effect will affect the threshold voltage, transconductance, saturation drain-source current of N-MOSFET, etc. It will seriously affect the performance and lifetime of products. The current model for HCI effect simulation is mainly by modifying the SPICE model of N-MOSFET, which requires complex experiments and parameter extraction. This paper establishes an HCI effect equivalent circuit model for a 65 nm N-MOSFET. Based on the N-MOSFET model in a 65 nm Process Design Kit (PDK), essential electrical components and arithmetic components (which are provided by EDA tools), this equivalent circuit model achieves the HCI effect simulation. This equivalent circuit model offers five tunable input parameters for the user, which are channel width (W), channel length (L), ambient temperature (Temp), stress time (Year), process corner (fast, typical, slow). The effect of gate-source voltage, drain-source voltage, and gate-drain voltage on HCI effect is included in this model. The simulation results of this model are compared with the measured results in other literatures, and the results are fitted well.