Abstract
Schrödinger and Poisson equations are solved self-consistently to calculate the quantum mechanical properties of AlGaAsSb/InAs/AlGaAsSb single quantum wells formed in high electron mobility transistors. The two dimensional electron gas (2DEG) distribution is calculated and shows excellent confinement both at room temperature and at 77 K. The variation of the average distance of the electron cloud, from the first heterointerface, with the 2DEG concentration is a strong function of the quantum well (QW) width. A minimum 2DEG concentration threshold, dictated by the QW width and the unintentional doping level of the substrate, exists at room temperature. This effect may prohibit the pinching-off of the channel at room temperature, especially for wide QWs.
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