An endurance-enhanced Flash Translation Layer via reuse for NAND flash memory storage systems

Abstract

NAND flash memory is widely used in embedded systems due to its non-volatility, shock resistance and high cell density. In recent years, various Flash Translation Layer (FTL) schemes (especially hybrid-level FTL schemes) have been proposed. Although these FTL schemes provide good solutions in terms of endurance and wear-leveling, none of them have considered to reuse free pages in both data blocks and log blocks during a merge operation. By reusing these free pages, less free blocks are needed and the endurance of NAND flash memory is enhanced. We evaluate our reuse strategy using a variety of application specific I/O traces from Windows systems. Experimental results show that the proposed scheme can effectively reduce the erase counts and enhance the endurance of flash memory.