Abstract
We have studied the sample bias dependence of the plama oxidation of silicon using real-time ellipsometry over a range of bias voltage from −60 to 60 V. The observed acceleration of oxidation at both positive and negative biases during the early stages of oxidation suggests that the direct reactions of both positive and negative species with the surface dominate the plasma oxidation process at the silicon surface. This is distinctly different from conventional anodic oxidation, which is explained in terms of transport of negative species in the oxide for thick oxide growth.
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