Abstract
The effects of applied bias on initial plasma oxidation of silicon was studied using real-time ellipsometry and Langmuir probe measurements. In the ultra-thin oxide regime, the plasma oxidation is enhanced by both positive bias and negative bias. The enhancement of the growth rate of oxide is explained mainly by the collision of electrons with adsorbed oxygen species, caused by positive bias, and by the collision of positive ions with the surface, caused by negative bias.
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