Abstract
AbstractThis article introduces a CAD‐oriented functional model of the microwave FET depending on temperature as an additional state variable in addition to the usual gate and drain voltages. The model is fully conservative and non‐quasistatic, and thus considerably more advanced than other currently available empirical models. A novel parameter extraction strategy allows the simultaneous determination of the voltage and temperature dependence of the constitutive relations, making use of a set of DC measurements and bias‐dependent scattering matrices obtained at a single ambient temperature. The model can be coupled to a harmonic‐balance algorithm for the efficient electrothermal simulation of temperature‐dependent nonlinear microwave circuits, which the authors discussed in a previous article.
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