Abstract
Voltage pulses of variable length were applied to CuIn1−xGaxSe2/CdS (0<x<1) junction solar cells. The resulting nonexponential transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead, they follow a simple model based on electrostatic charging of localized regions of traps. The potential barrier height to trap filling was found to be ∼0.3 eV for all-alloy compositions. Hole capture cross-section data for a single defect are obtained.
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