Abstract
A novel electro-enhanced metalorganic chemical vapor deposition (EEMOCVD) technique for producing copper (Cu) thin films on TaN/Si substrates with hexafluoroacetylacetonate-copper(I)-1,5-cyclo-octadine, (hfac)Cu I(COD), as a precursor was investigated in this paper. This novel technique features supplying a direct current (DC) to TaN/Si substrates while the deposition of Cu thin films is in progress. Experiments on EEMOCVD yielded fortuitously positive results: (1) the deposited Cu films were superior in quality and (2) the growth rate of Cu film deposition increased. The above results are more desirable than those achieved through the conventional MOCVD (CMOCVD) technique. The proposed EEMOCVD technique hence proves to be more effective in forming smooth and continuous thin copper films.
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