Abstract
A study of the temperature dependence of the electrical conductivity in the low-temperature region is made on an SbSI ingot for the first time. The ingot used in the present investigation is grown from melt by the temperature-fluctuation technique. The electrical conductivity is measured by applying a weak DC field along the c axis (needle axis) of the crystals. An anomaly is observed at 225 K in the plot of the electrical conductivity against temperature of the sample. This second-order phase-transition temperature obtained from the electrical conductivity study made on the SbSI ingot is compared with that obtained from other studies made on individual single-crystalline needles as well as inter-growths grown by other techniques and the results are discussed.
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