Abstract
An electrical comparison based on signal delay, coupled noise, and reference system noise is conducted for single, double, and triple metal configurations of tape automated bonding (TAB) tape IC packages. Variation in tape size is included and edge rate dependence is investigated. CMOS device technology is assumed. Comparisons are made based on assumptions for basic parameters such as tape features, lead count, and edge rates. The significance of the single metal inner (ILB) and outer (OLB) lead bond tape sections together with substrate dispersion traces, in influencing performance variation with multimetal tapes is illustrated. An improvement is shown in quiet line coupled noise performance for double metal tape over comparable single metal tape, with no similar trends for triple metal tape over double metal tape. Multimetal tapes consistently provide shorter signal delays relative to single metal tapes. Reference noise comparisons do not indicate a clear trend with a number of metal layers. Consistent performance improvement is observed in going to the shorter tapes allowed by finer substrate via pitches. >
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