Abstract
Deviations from randomicity in In x Ga 1− x As semiconductor alloys induced by elastic effects are investigated within the Keating potential. Our model is based on Monte Carlo simulations on large (4096 atoms) supercells, performed with two types of boundary conditions: fully periodic boundary conditions represent the bulk, while periodic boundary conditions along the x and y directions and a free surface in the z direction simulate the epitaxial growth environment. We show that In–In correlations identified in the bulk tend to be enhanced in the epitaxially grown samples.
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