Abstract
AbstractWe investigate the application of preconditioned generalized minimal residual (GMRES) algorithm to the equations of hydrodynamic model of semiconductor devices. An introduction to such a model is presented. We use finite‐element method P1‐isoP2 element to discretize the equations. A preconditioning technique is proposed. The CPU times are presented for n+‐n‐n+ diodes and 0.25 μm gate length Si MESFETs by using the preconditioned GMRES algorithm and the GMRES algorithm. The numerical results show that the preconditioning technique accelerates effectively the velocity of convergence. Copyright © 2003 John Wiley & Sons, Ltd.
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