Abstract
An efficient electrode scheme is developed to enhance the inline detector performance of a 1.55μm, InP–InGaAsP, Traveling Wave-Semiconductor Optical Amplifier (TW-SOA). A traveling wave approach is used to determine the voltage developed along the length of the TWSOA, accurately. A single electrode along the entire length of the device and a single, short length electrode kept at certain distance from the front facet are investigated, for input optical power levels ranging from −25dBm to +5dBm. Efficient position of the single electrode along the cavity length is determined for maximum detected voltage. Under this scheme, the inline detector with an electrode length of 100μm positioned at 200μm from the front facet, is found to provide a improvement of 6dB and 8dB in detected voltage for 40mA and 50mA bias respectively, at −10dBm input, when compared with the maximum detected voltage reported in the literature.
Published Version
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