Abstract

We design a T-shape structure reflecting mirror covered a gold thin film on the high-resistivity silicon substrate (ρ=1000 Ω·Cm) for the detector array. The electric field distribution of the T-shape structure is simulated by using finite difference time domain (FDTD) solutions in the frequency range from 300 GHz to 400 GHz. The electric field can be gathered in the central area of the silicon substrate surface, and it can be enhanced about 3 times compared with the F-P cavity structure at 343 GHz. The simulation result indicates that the signal can be efficiently coupled in the place of the detector, and this structure is very suitable for the detector array.

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