Abstract
A /spl pi/ technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling (C. P. Liao et al., April 4, 2000). However, up to this day the physics behind this proton-caused defect phase is never clear. An effective 1-level defect model is constructed using experimental results and existing single-trap-level theory (Moll J. L. 1964) and TRIM (or SRIM) (http://www.srim.org/) code-simulated parameters. The found effective single trap level (E/spl tau/) is at about +0.24 eV in n-Si and at -0.34 eV in p-Si, measuring from the center of the energy band-gap.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.